| PART |
Description |
Maker |
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| RN4987FE |
TOSHIBA Transistor Silicon NPNPNP Epitaxial Type
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type
|
Toshiba Semiconductor
|
| RN4962FE |
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L04AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5174 |
From old datasheet system
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5748 |
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8505 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process
|
Toshiba Semiconductor
|
